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BFR91AGELB PDF预览

BFR91AGELB

更新时间: 2024-01-24 07:34:06
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管
页数 文件大小 规格书
8页 169K
描述
Silicon NPN Planar RF Transistor

BFR91AGELB 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:DISK BUTTON, O-CRDB-F3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.75其他特性:LOW NOISE
最大集电极电流 (IC):0.035 A基于收集器的最大容量:1 pF
集电极-发射极最大电压:12 V配置:SINGLE
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:O-CRDB-F3
元件数量:1端子数量:3
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:FLAT
端子位置:RADIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):5000 MHzBase Number Matches:1

BFR91AGELB 数据手册

 浏览型号BFR91AGELB的Datasheet PDF文件第2页浏览型号BFR91AGELB的Datasheet PDF文件第3页浏览型号BFR91AGELB的Datasheet PDF文件第4页浏览型号BFR91AGELB的Datasheet PDF文件第5页浏览型号BFR91AGELB的Datasheet PDF文件第6页浏览型号BFR91AGELB的Datasheet PDF文件第7页 
Not for new design, this product will be obsoleted soon BFR91A  
Vishay Semiconductors  
Silicon NPN Planar RF Transistor  
Features  
3
B
• High power gain  
• Low noise figure  
3
2
2
e3  
• High transition frequency  
• Lead (Pb)-free component  
E
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
1
C
1
19039  
Electrostatic sensitive device.  
Observe precautions for handling.  
Applications  
• RF amplifier up to GHz range specially for wide  
band antenna amplifier  
Mechanical Data  
Case: TO-50 plastic case  
Weight: approx. 111 mg  
Pinning: 1 = collector, 2 = emitter, 3 = base  
Parts Table  
Part  
Ordering code  
BFR91AGELB  
Marking  
BFR91A  
Remarks  
Package  
TO-50(3)  
BFR91A  
Packed in Bulk  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VCBO  
Value  
Unit  
V
Collector base voltage  
20  
Collector emitter voltage  
Emitter base voltage  
Collector current  
VCEO  
VEBO  
IC  
12  
V
V
2
50  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature range  
Tamb 60 °C  
Ptot  
Tj  
300  
150  
Tstg  
- 65 to + 150  
°C  
Maximum Thermal Resistance  
Parameter  
Junction ambient  
Note:  
1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 μm Cu  
Test condition  
Symbol  
RthJA  
Value  
300  
Unit  
K/W  
1)  
For technical support, please contact: RF-Transistor@vishay.com  
Document Number 85031  
Rev. 1.6, 08-Sep-08  
www.vishay.com  
1

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