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BFR91AGELB-GS08 PDF预览

BFR91AGELB-GS08

更新时间: 2024-01-19 00:59:06
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 290K
描述
Transistor

BFR91AGELB-GS08 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.83最大集电极电流 (IC):0.05 A
配置:Single最小直流电流增益 (hFE):40
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W子类别:Other Transistors
表面贴装:YESBase Number Matches:1

BFR91AGELB-GS08 数据手册

 浏览型号BFR91AGELB-GS08的Datasheet PDF文件第2页浏览型号BFR91AGELB-GS08的Datasheet PDF文件第3页浏览型号BFR91AGELB-GS08的Datasheet PDF文件第4页浏览型号BFR91AGELB-GS08的Datasheet PDF文件第5页浏览型号BFR91AGELB-GS08的Datasheet PDF文件第6页浏览型号BFR91AGELB-GS08的Datasheet PDF文件第7页 
BFR91A  
Vishay Semiconductors  
Silicon NPN Planar RF Transistor  
3
B
Features  
3
2
• High power gain  
2
• Low noise figure  
e3  
E
• High transition frequency  
• Lead (Pb)-free component  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
1
C
1
19039  
Electrostatic sensitive device.  
Applications  
RF amplifier up to GHz range specially for wide band  
antenna amplifier.  
Observe precautions for handling.  
Mechanical Data  
Case: TO-50 Plastic case  
Weight: approx. 111 mg  
Pinning: 1 = Collector, 2 = Emitter, 3 = Base  
Parts Table  
Part  
Ordering code  
Marking  
Remarks  
Package  
BFR91A  
BFR91AGELB-GS08  
BFR91A  
Packed in Bulk  
TO-50(3)  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Value  
20  
Unit  
V
Collector-base voltage  
VCBO  
VCEO  
VEBO  
IC  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
12  
2
V
V
50  
mA  
mW  
°C  
Total power dissipation  
Junction temperature  
Storage temperature range  
Tamb 60 °C  
Ptot  
300  
150  
Tj  
Tstg  
- 65 to + 150  
°C  
Maximum Thermal Resistance  
Parameter  
Test condition  
Symbol  
RthJA  
Value  
300  
Unit  
K/W  
1)  
Junction ambient  
1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 μm Cu  
Document Number 85031  
Rev. 1.4, 29-Apr-05  
www.vishay.com  
1

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