Datasheet > BFR840L3RHESD

BFR840L3RHESD

更新时间： 2023-09-03 20:28:07

品牌	Logo	应用领域
英飞凌 - INFINEON		射频晶体管
页数	文件大小	规格书
22页	464K
描述
BFR840L3RHESD 是一款分立射频异质结双极晶体管 (HBT)，集成静电放电保护，适用于 5 GHz 频带应用。

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BFR840L3RHESD 数据手册

BFR840L3RHESD

SiGe:C NPN RF bipolar transistor

Product description

The BFR840L3RHESD is a dicrete RF heterojunction bipolar transistor (HBT) with an

integrated ESD protection suitable for 5 GHz band applications.

Feature list

•

Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,

1.5 kV HBM ESD hardness

•

High transition frequency f_T= 75 GHz to enable best in class noise performance at high frequencies:

NF_min= 0.65 dB at 5.5 GHz; 1.1 dB at 12 GHz, 1.8 V, 5 mA

•

High gain G_ms= 22 dB at 5.5 GHz, 1.8 V, 10 mA

OIP₃= 18 dBm at 5.5 GHz, 1.8 V, 10 mA

Ideal for low voltage applications e.g. V_CC= 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding

collector resistor)

•

Low profile and small form factor leadless package

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Potential applications

•

Wireless communications: WLAN 2.4 GHz and 5-6 GHz bands, WiMAX and UWB

Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, GLONASS,

BeiDou, Galilleo)

Device information

Table 1

Part information

Product name / Ordering code

Package Pin configuration

Marking Pieces / Reel

15000

BFR840L3RHESD / BFR840L3RHESDE6327XTSA1 TSLP-3-9 1 = B 2 = C 3 = E T8

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Datasheet

Please read the Important Notice and Warnings at the end of this document

v2.0

www.infineon.com

2018-09-26

12 3 4 5 6 7...22

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