Datasheet > BFR750L3RH

BFR750L3RH

更新时间： 2024-02-26 21:41:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
8页	79K
描述
NPN Silicon Germanium RF Transistor

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BFR750L3RH 数据手册

BFR750L3RH

NPN Silicon Germanium RF Transistor*

• High gain ultra low noise RF transistor

• Provides outstanding performance for a wide range

of wireless applications up to 10 GHz

• Ideal for WLAN and all 5-6 GHz applications

• High OIP and P

for driver stages

-1dB

• High maximum stable and available gain

= 21 dB at 1.8 GHz, G = 11.5 dB at 6 GHz

• 150 GHz f -Silicon Germanium technology

• Extremly small and flat leadless package,

reduced height 0.32 mm max.

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

2=C 3=E

Package

BFR750L3RH

TSLP-3-9

1=B

¹Pb-containing package may be available upon special request

2007-04-26

12 3 4 5 6 7 8

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