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BFP520FH6327XTSA1 PDF预览

BFP520FH6327XTSA1

更新时间: 2024-11-11 21:18:23
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器光电二极管晶体管
页数 文件大小 规格书
6页 530K
描述
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, KU Band, Silicon, NPN, ROHS COMPLIANT, TSFP-4

BFP520FH6327XTSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.66
其他特性:LOW NOISE, HIGH RELIABILITY最大集电极电流 (IC):0.04 A
基于收集器的最大容量:0.14 pF集电极-发射极最大电压:2.5 V
配置:SINGLE最高频带:KU BAND
JESD-30 代码:R-PDSO-F4元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
参考标准:AEC-Q101表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):45000 MHz
Base Number Matches:1

BFP520FH6327XTSA1 数据手册

 浏览型号BFP520FH6327XTSA1的Datasheet PDF文件第2页浏览型号BFP520FH6327XTSA1的Datasheet PDF文件第3页浏览型号BFP520FH6327XTSA1的Datasheet PDF文件第4页浏览型号BFP520FH6327XTSA1的Datasheet PDF文件第5页浏览型号BFP520FH6327XTSA1的Datasheet PDF文件第6页 
BFP520F  
Low Noise Silicon Bipolar RF Transistor  
For highest gain and low noise amplifier  
3
2
1
Outstanding Gms = 22.5 dB at 1.8 GHz  
4
Minimum noise figure NF  
= 0.95 dB at 1.8 GHz  
min  
For oscillators up to 15 GHz  
Transition frequency f = 45 GHz  
T
Pb-free (RoHS compliant) and halogen-free thin small  
flat package with visible leads  
Qualification report according to AEC-Q101 available  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFP520F  
Marking  
APs  
Pin Configuration  
1=B 2=E 3=C 4=E  
Package  
TSFP-4  
-
-
Maximum Ratings at T = 25 °C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
V
CEO  
T = 25 °C  
2.5  
2.4  
10  
10  
1
50  
5
120  
A
T = -55 °C  
A
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
Base current  
Total power dissipation  
V
V
V
CES  
CBO  
EBO  
mA  
mW  
°C  
I
C
I
B
1)  
P
tot  
T 98 °C  
Junction temperature  
S
150  
T
J
Storage temperature  
T
-55 ... 150  
Stg  
1
T is measured on the emitter lead at the soldering point to pcb  
S
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
430  
Unit  
K/W  
1)  
R
thJS  
1
2013-09-19  

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