BFP640

更新时间： 2024-01-11 22:53:13

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
8页	274K
描述
NPN Silicon Germanium RF Transistor

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中文翻译

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BFP640 数据手册

BFP640

NPN Silicon Germanium RF Transistor

• High gain low noise RF transistor

• Provides outstanding performance

for a wide range of wireless applications

• Ideal for CDMA and WLAN applications

• Outstanding noise figure F = 0.65 dB at 1.8 GHz

Outstanding noise figure F = 1.3 dB at 6 GHz

• High maximum stable gain

VPS05605

= 24 dB at 1.8 GHz

• Gold metallization for extra high reliability

• 70 GHz f -Silicon Germanium technology

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFP640

Marking

R4s

Pin Configuration

1=B 2=E 3=C 4=E

Package

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

T > 0 °C

CEO

3.7

1.2

T ≤ 0 °C

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CES

CBO

EBO

°C

Base current

Total power dissipation

200

tot

T ≤ 90°C

150

-65 ... 150

Junction temperature

Ambient temperature

Storage temperature

stg

T is measured on the collector lead at the soldering point to the pcb

Apr-21-2004

12 3 4 5 6 7 8

中文翻译

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