Datasheet > BFP620E6327

BFP620E6327

更新时间： 2024-01-12 18:45:53

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	87K
描述
TRANSISTOR,BJT,NPN,2.3V V(BR)CEO,80MA I(C),SOT-343

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中文翻译

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技术参数
数据手册

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BFP620E6327 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.65
Base Number Matches：	1

BFP620E6327 数据手册

BFP620

NPN Silicon Germanium RF Transistor

• High gain low noise RF transistor

• Provides outstanding performance

for a wide range of wireless applications

• Ideal for CDMA and WLAN applications

• Outstanding noise figure F = 0.7 dB at 1.8 GHz

Outstanding noise figure F = 1.3 dB at 6 GHz

• Maximum stable gain

= 21.5 dB at 1.8 GHz

= 11 dB at 6 GHz

• Gold metallization for extra high reliability

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

1=B 2=E 3=C 4=E

Package

SOT343

BFP620

R2s

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

T > 0 °C

CEO

2.3

2.1

7.5

1.2

T ≤ 0 °C

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CES

CBO

EBO

°C

Base current

185

Total power dissipation

tot

T ≤ 95°C

150

Junction temperature

Ambient temperature

Storage temperature

-65 ... 150

stg

T is measured on the collector lead at the soldering point to the pcb

2005-10-17

12 3 4 5 6 7...9

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