Datasheet > BFP640F-E6327

BFP640F-E6327

更新时间： 2024-01-31 02:11:56

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	243K
描述
RF Small Signal Bipolar Transistor, 0.05A I(C), NPN,

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BFP640F-E6327 技术参数

BFP640F

NPN Silicon Germanium RF Transistor*

• High gain low noise RF transistor

• Provides outstanding performance

for a wide range of wireless applications

• Ideal for CDMA and WLAN applications

• Outstanding noise figure F = 0.65 dB at 1.8 GHz

Outstanding noise figure F = 1.2 dB at 6 GHz

• High maximum stable gain

Top View

= 23 dB at 1.8 GHz

XYs

• Gold metallization for extra high reliability

• 70 GHz f -Silicon Germanium technology

• Pb-free (RoHS compliant) package

Direction of Unreeling

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP640F

Marking

R4s

Pin Configuration

1=B 2=E 3=C 4=E

Package

TSFP-4

¹Pb-containing package may be available upon special request

2007-05-31

12 3 4 5 6 7...10

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