Datasheet > BFP650E6327

BFP650E6327

更新时间： 2024-09-30 22:30:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	184K
描述
NPN Silicon Germanium RF Transistor

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BFP650E6327 数据手册

BFP650

NPN Silicon Germanium RF Transistor

Preliminary data

For high power amplifiers

Ideal for low phase noise oscilators

Maxim. available Gain G = 21 dB at 1.8 GHz

Noise figure F = 0.9 dB at 1.8 GHz

Gold metallization for high reliability

VPS05605

70 GHz f - Silicon Germanium technology

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFP650

Marking

R5s

Pin Configuration

1=B 2=E 3=C 4=E

Package

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

1.2

150

°C

Base current

Total power dissipation

500

tot

75°C

150

-65 ... 150

Junction temperature

Ambient temperature

Storage temperature

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

140

thJS

T is measured on the collector lead at the soldering point to the pcb

For calculation of R

please refer to Application Note Thermal Resistance

thJA

Mar-27-2003

12 3 4 5 6

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