Datasheet > BFP650FE6327

BFP650FE6327

更新时间： 2024-10-01 19:54:59

品牌	Logo	应用领域
英飞凌 - INFINEON		放大器光电二极管晶体管
页数	文件大小	规格书
7页	544K
描述
RF Small Signal Bipolar Transistor, 0.15A I(C), 1-Element, L Band, Silicon Germanium, NPN, ROHS COMPLIANT, TSFP-4, 4 PIN

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BFP650FE6327 技术参数

BFP650F

Linear Low Noise SiGe:C Bipolar RF Transistor

• For medium power amplifiers and driver stages

• Based on Infineon' s reliable high volume Silicon

Germanium technology

• High OIP3 and P

-1dB

• Ideal for low phase noise oscilators

• Maxim. available Gain G = 21.5 dB at 1.8 GHz

Minimun noise figure NF

= 0.8 dB at 1.8 GHz

min

• Pb-free (RoHS compliant) and halogen-free thin small

flat package with visible leads

• Qualification report according to AEC-Q101 available

Top View

XYs

Direction of Unreeling

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP650F

Marking

R5s

Pin Configuration

1=B 2=E 3=C 4=E

Package

TSFP-4

2013-09-06

12 3 4 5 6 7

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BFP67R	VISHAY	获取价格	Silicon NPN Planar RF Transistor
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