Datasheet > BFP720-E6433

BFP720-E6433

更新时间： 2024-01-27 08:32:03

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体管
页数	文件大小	规格书
5页	500K
描述
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, Silicon Germanium, NPN

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BFP720-E6433 技术参数

BFP720

NPN Silicon Germanium RF Transistor

Target data sheet

• High gain ultra low noise RF transistor

for low current operation

• Provides outstanding performance for

a wide range of wireless applications

up to 10 GHz and more

• Optimum gain and noise figure

at low current operation

• Ideal for WLAN applications

• Outstanding noise figure F = 0.5 dB at 1.8 GHz

Outstanding noise figure F = 0.85 dB at 6 GHz

• High maximum stable and available gain

= 26 dB at 1.8 GHz, G = 18 dB at 6 GHz

• 150 GHz f -Silicon Germanium technology

• Pb-free (RoHS compliant) package

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP720

Marking

R9s

Pin Configuration

1 = B 2 = E 3 = C 4 = E -

Package

SOT343

2008-07-04

12 3 4 5

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