Datasheet > BFP740_09

BFP740_09

更新时间： 2024-02-29 21:40:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	595K
描述
NPN Silicon Germanium RF Transistor

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BFP740_09 数据手册

BFP740

NPN Silicon Germanium RF Transistor

• High gain ultra low noise RF transistor

• Provides outstanding performance for

a wide range of wireless applications

up to 10 GHz and more

• Ideal for CDMA and WLAN applications

• Outstanding noise figure F = 0.5 dB at 1.8 GHz

Outstanding noise figure F = 0.85 dB at 6 GHz

• High maximum stable gain

= 27 dB at 1.8 GHz

• Gold metallization for extra high reliability

• 150 GHz f -Silicon Germanium technology

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP740

Marking

R7s

Pin Configuration

1=B 2=E 3=C 4=E

Package

SOT343

¹Pb-containing package may be available upon special request

2009-12-04

12 3 4 5 6 7...10

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