Datasheet > BFP740E6327

BFP740E6327

更新时间： 2024-02-06 23:41:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	589K
描述
RF Small Signal Bipolar Transistor,

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BFP740E6327 技术参数

BFP740

NPN Silicon Germanium RF Transistor

• High gain ultra low noise RF transistor

• Provides outstanding performance for

a wide range of wireless applications

up to 10 GHz and more

• Ideal for CDMA and WLAN applications

• Outstanding noise figure F = 0.5 dB at 1.8 GHz

Outstanding noise figure F = 0.85 dB at 6 GHz

• High maximum stable gain

= 27 dB at 1.8 GHz

• Gold metallization for extra high reliability

• 150 GHz f -Silicon Germanium technology

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP740

Marking

R7s

Pin Configuration

1=B 2=E 3=C 4=E

Package

SOT343

¹Pb-containing package may be available upon special request

2009-12-04

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
BFP740E6327HTSA1	INFINEON	获取价格	RF Small Signal Bipolar Transistor,
BFP740ESD	INFINEON	获取价格	Robust High Performance Low Noise Bipolar RF Transistor
BFP740F	INFINEON	获取价格	NPN Silicon Germanium RF Transistor
BFP740F_07	INFINEON	获取价格	NPN Silicon Germanium RF Transistor
BFP740FE6327	INFINEON	获取价格	NPN Silicon Germanium RF Transist
BFP740F-E6327	INFINEON	获取价格	Transistor
BFP740F-E6433	INFINEON	获取价格	Transistor
BFP740FESD	INFINEON	获取价格	Robust High Performance Low Noise Bipolar RF Transistor
BFP740FESDE6327	INFINEON	获取价格	RF Small Signal Bipolar Transistor, 0.045A I(C), 1-Element, X Band, Silicon Germanium Carb
BFP740FESDH6327XTSA1	INFINEON	获取价格	RF Small Signal Bipolar Transistor, 0.045A I(C), 1-Element, X Band, Silicon Germanium Carb