是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.78 |
最大集电极电流 (IC): | 120 A | 最小直流电流增益 (hFE): | 160 |
元件数量: | 1 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 0.36 W | 子类别: | BIP RF Small Signal |
表面贴装: | YES | 晶体管元件材料: | SILICON GERMANIUM |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFP750-E6433 | INFINEON |
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RF Small Signal Bipolar Transistor, 120A I(C), 1-Element, Silicon Germanium, NPN | |
BFP750H6327XTSA1 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.12A I(C), 1-Element, X Band, Silicon Germanium Carbo | |
BFP760 | INFINEON |
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Low Noise Silicon Germanium Bipolar RF Transistor | |
BFP760_15 | INFINEON |
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Low Noise Silicon Germanium Bipolar RF Transistor | |
BFP760H6327XTSA1 | INFINEON |
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RF Small Signal Bipolar Transistor, | |
BFP780 | INFINEON |
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200 mW High Gain RF Driver Amplifier | |
BFP780_15 | INFINEON |
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200 mW High Gain RF Driver Amplifier | |
BFP81 | VISHAY |
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Silicon NPN Planar RF Transistor | |
BFP81 | INFINEON |
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NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from | |
BFP81_08 | VISHAY |
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Silicon NPN Planar RF Transistor |