Datasheet > BFP842ESD

BFP842ESD

更新时间： 2024-09-14 11:13:35

品牌	Logo	应用领域
英飞凌 - INFINEON		射频晶体管
页数	文件大小	规格书
21页	526K
描述
BFP842ESD 是高性能射频异质结双极晶体管 (HBT)，集成静电放电保护，适用于 2.3 - 3.5 GHz LNA 应用。

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BFP842ESD 数据手册

BFP842ESD

SiGe:C NPN RF bipolar transistor

Product description

The BFP842ESD is a high performance RF heterojunction bipolar transistor (HBT) with an

integrated ESD protection suitable for 2.3 - 3.5 GHz LNA applications.

Feature list

•

Unique combination of high end RF performance and robustness: 16 dBm maximum RF input power,

1 kV HBM ESD hardness

•

High transition frequency f_T= 57 GHz to enable best in class noise performance at high frequencies:

NF_min= 0.65 dB at 3.5 GHz, 2.5 V, 5 mA

•

High gain G_ma= 17.5 dB at 3.5 GHz, 2.5 V, 15 mA

OIP₃= 25.5 dBm at 3.5 GHz, 2.5 V, 15 mA

Suitable for low voltage applications e.g. V_CC= 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require corresponding

collector resistor)

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Potential applications

•

Wireless communications: WLAN, WiMAX and Bluetooth

Satellite communication systems: GNSS navigation systems (GPS, GLONASS, BeiDou, Galileo), satellite

radio (SDARs, DAB) and C-band LNB (1st and 2nd stage LNA)

•

Multimedia applications such as mobile/portable TV, mobile TV and FM radio

3G/4G UMTS/LTE mobile phone applications

ISM applications like RKE, AMR and Zigbee

Device information

Table 1

Part information

Product name / Ordering code

Package

Pin configuration

Marking

Pieces / Reel

BFP842ESD / BFP842ESDH6327XTSA1

SOT343

1 = B 2 = E 3 = C 4 = E T9s

3000

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

v2.0

2018-09-26

12 3 4 5 6 7...21

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