Datasheet > BFP843F

BFP843F

更新时间： 2024-11-12 14:51:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体管
页数	文件大小	规格书
21页	455K
描述
BFP843F 是一种低噪声宽带预匹配异质结双极晶体管 (HBT)。

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中文翻译

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BFP843F 数据手册

BFP843F

SiGe:C NPN RF bipolar transistor

Product description

The BFP843F is a robust low noise broadband pre-matched RF heterojunction bipolar

transistor (HBT).

Feature list

•

Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,

1.5 kV HBM ESD hardness

•

High transition frequency to enable best in class noise performance at high frequencies:

NF_min= 1.1 dB at 5.5 GHz, 1.8 V, 8 mA

•

High gain G_ma= 18 dB at 5.5 GHz, 1.8 V, 15 mA

OIP₃= 19.5 dBm at 5.5 GHz, 1.8 V, 15 mA

Suitable for low voltage applications e.g. V_CC= 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding

collector resistor)

Product validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Potential applications

•

WLAN, WiMAX and UWB

Satellite communication systems: satellite radio (SDARs, DAB) and navigation systems (e.g. GPS, GLONASS,

BeiDou, Galileo)

Device information

Table 1

Part information

Product name / Ordering code

Package

Pin configuration

Marking

Pieces / Reel

BFP843F / BFP843FH6327XTSA1

TSFP-4-1

1 = B 2 = E 3 = C 4 = E T2s

3000

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

Datasheet

www.infineon.com

Please read the Important Notice and Warnings at the end of this document

v2.0

2018-09-26

12 3 4 5 6 7...21

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