Datasheet > BFP740F-H6327

BFP740F-H6327

更新时间： 2024-02-21 09:41:45

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BFP740F-H6327 技术参数

BFP740F

NPN Silicon Germanium RF Transistor

• High gain ultra low noise RF transistor

• Provides outstanding performance for

a wide range of wireless applications

up to 10 GHz and more

• Ideal for CDMA and WLAN applications

• Outstanding noise figure F = 0.5 dB at 1.8 GHz

Outstanding noise figure F = 0.75 dB at 6 GHz

• High maximum stable gain

Top View

XYs

= 27.5 dB at 1.8 GHz

• Gold metallization for extra high reliability

Direction of Unreeling

• 150 GHz f -Silicon Germanium technology

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

1=B 2=E 3=C 4=E

Package

TSFP-4

BFP740F

R7s

¹Pb-containing package may be available upon special request

2007-04-20

12 3 4 5 6 7...10

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