Datasheet > BFP690

BFP690

更新时间： 2024-01-07 11:33:42

品牌	Logo	应用领域
其他 - ETC		晶体放大器晶体管功率放大器
页数	文件大小	规格书
6页	186K
描述
?NPN SiGe RF Transistor. medium power amps. low noise RF transistor in SCT595 Package. 4V. 350mA?

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BFP690 数据手册

BFP690

NPN Silicon Germanium RF Transistor

Preliminary data

For medium power amplifiers

Maxim. available Gain G = 17 dB at 1.8 GHz

Gold metallization for high reliability

70 GHz f - Silicon Germanium technology

VPW05980

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFP690

Marking

R9s

Pin Configuration

1=B 2=E 3=C 4=C 5=E

Package

SCT595

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

1.2

350

°C

Base current

Total power dissipation

1000

tot

80°C

150

-65 ... 150

Junction temperature

Ambient temperature

Storage temperature

stg

Thermal Resistance

Parameter

Symbol

Value

Unit

K/W

Junction - soldering point

thJS

T is measured on the collector lead at the soldering point to the pcb

For calculation of R

please refer to Application Note Thermal Resistance

thJA

Oct-30-2002

12 3 4 5 6

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