是否Rohs认证: | 符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | 风险等级: | 5.61 |
最大集电极电流 (IC): | 0.05 A | 配置: | Single |
最小直流电流增益 (hFE): | 110 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.2 W |
子类别: | Other Transistors | 表面贴装: | YES |
标称过渡频率 (fT): | 30000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BFP640FESD | INFINEON |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, X Band, Silicon Germanium Carbo | |
BFP640FESDE6327 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, X Band, Silicon Germanium Carbo | |
BFP640FESDH6327XTSA1 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, X Band, Silicon Germanium Carbo | |
BFP640FH6327XTSA1 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN, | |
BFP640H6327 | INFINEON |
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NPN Silicon Germanium RF Transistor | |
BFP640H6327XTSA1 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN, | |
BFP640H6433 | INFINEON |
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RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN, | |
BFP650 | INFINEON |
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NPN Silicon Germanium RF Transistor | |
BFP650_10 | INFINEON |
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High Linearity Low Noise SiGe:C NPN RF Transistor | |
BFP650E6327 | INFINEON |
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NPN Silicon Germanium RF Transistor |