Datasheet > BFP620F_07

BFP620F_07

更新时间： 2024-11-11 08:52:31

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	154K
描述
NPN Silicon Germanium RF Transistor

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BFP620F_07 数据手册

BFP620F

NPN Silicon Germanium RF Transistor*

• High gain low noise RF transistor

• Small package 1.4 x 0.8 x 0.59 mm

• Outstanding noise figure F = 0.7 dB at 1.8 GHz

Outstanding noise figure F = 1.3 dB at 6 GHz

• Maximum stable gain

= 21 dB at 1.8 GHz

= 10 dB at 6 GHz

Top View

• Gold metallization for extra high reliability

XYs

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Direction of Unreeling

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

1=B 2=E 3=C 4=E

Package

TSFP-4

BFP620F

R2s

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

T > 0 °C

CEO

2.3

2.1

7.5

1.2

T ≤ 0 °C

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CES

CBO

EBO

°C

Base current

185

Total power dissipation

tot

T ≤ 96°C

150

Junction temperature

Ambient temperature

Storage temperature

-65 ... 150

stg

¹Pb-containing package may be available upon special request

²T is measured on the collector lead at the soldering point to the pcb

2007-04-20

12 3 4 5 6 7...10

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