Datasheet > BFP640_07

BFP640_07

更新时间： 2024-02-12 05:04:32

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	155K
描述
NPN Silicon Germanium RF Transistor

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BFP640_07 数据手册

BFP640

NPN Silicon Germanium RF Transistor

• High gain low noise RF transistor

• Provides outstanding performance

for a wide range of wireless applications

• Ideal for CDMA and WLAN applications

• Outstanding noise figure F = 0.65 dB at 1.8 GHz

Outstanding noise figure F = 1.2 dB at 6 GHz

• High maximum stable gain

= 24 dB at 1.8 GHz

• Gold metallization for extra high reliability

• 70 GHz f -Silicon Germanium technology

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

1=B 2=E 3=C 4=E

Package

SOT343

BFP640

R4s

¹Pb-containing package may be available upon special request

2007-05-29

12 3 4 5 6 7...10

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型号	品牌	获取价格	描述	数据表
BFP640_E_L6327	INFINEON	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN,
BFP640_E_L7764	INFINEON	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN,
BFP640E6327	INFINEON	获取价格	NPN Silicon Germanium RF Transistor
BFP640-E6327	INFINEON	获取价格	Transistor
BFP640-E6433	INFINEON	获取价格	Transistor
BFP640ESD	INFINEON	获取价格	Robust High Performance Low Noise Bipolar RF Transistor
BFP640ESDH6327XTSA1	INFINEON	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, X Band, Silicon Germanium Carbo
BFP640F	INFINEON	获取价格	NPN Silicon Germanium RF Transistor
BFP640F_07	INFINEON	获取价格	NPN Silicon Germanium RF Transistor
BFP640F-E6327	INFINEON	获取价格	RF Small Signal Bipolar Transistor, 0.05A I(C), NPN,