Datasheet > BFP540ESDE6327HTSA1

BFP540ESDE6327HTSA1

更新时间： 2024-01-28 22:19:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
5页	135K
描述
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, SOT-343, 4 PIN

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BFP540ESDE6327HTSA1 数据手册

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BFP540ESD

NPN Silicon RF Transistor

Preliminary data

• For highest gain low noise amplifier

at 1.8 GHz

• Outstanding G = 21.0 dB

Noise Figure F = 0.9 dB

• Gold metallization for high reliability

• SIEGET 45 - Line

VPS05605

• Exellent ESD performance

typical value > 1000 V (HBM)

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP540ESD

Marking

AUs

Pin Configuration

1=B 2=E 3=C 4=E

Package

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

T > 0°C

CEO

3.5

250

T ≤ 0°C

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CES

CBO

EBO

°C

Base current

Total power dissipation

tot

T ≤ 77°C

150

-65 ... 150

Junction temperature

Ambient temperature

Storage temperature

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 290

Unit

K/W

thJS

T is measured on the collector lead at the soldering point to the pcb

For calculation of R

please refer to Application Note Thermal Resistance

thJA

2005-06-09

12 3 4 5

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