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BFP540ESDE6433 PDF预览

BFP540ESDE6433

更新时间: 2024-09-29 21:07:19
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器光电二极管晶体管
页数 文件大小 规格书
5页 135K
描述
RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, SOT-343, 4 PIN

BFP540ESDE6433 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.31
其他特性:HIGH RELIABILITY, LOW NOISE外壳连接:EMITTER
最大集电极电流 (IC):0.08 A基于收集器的最大容量:0.24 pF
集电极-发射极最大电压:4 V配置:SINGLE
最小直流电流增益 (hFE):50最高频带:L BAND
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):34000 MHzBase Number Matches:1

BFP540ESDE6433 数据手册

 浏览型号BFP540ESDE6433的Datasheet PDF文件第2页浏览型号BFP540ESDE6433的Datasheet PDF文件第3页浏览型号BFP540ESDE6433的Datasheet PDF文件第4页浏览型号BFP540ESDE6433的Datasheet PDF文件第5页 
BFP540ESD  
NPN Silicon RF Transistor  
Preliminary data  
For highest gain low noise amplifier  
at 1.8 GHz  
3
4
Outstanding G = 21.0 dB  
ms  
2
Noise Figure F = 0.9 dB  
Gold metallization for high reliability  
SIEGET 45 - Line  
VPS05605  
1
Exellent ESD performance  
typical value > 1000 V (HBM)  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFP540ESD  
Marking  
AUs  
Pin Configuration  
1=B 2=E 3=C 4=E  
Package  
SOT343  
-
-
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
T > 0°C  
V
CEO  
4
3.5  
12  
12  
1
80  
8
250  
A
T 0°C  
A
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CES  
CBO  
EBO  
mA  
mW  
°C  
I
I
C
Base current  
Total power dissipation  
B
1)  
P
tot  
T 77°C  
S
150  
-65 ... 150  
-65 ... 150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
j
A
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
290  
Unit  
K/W  
2)  
R
thJS  
1
2
T is measured on the collector lead at the soldering point to the pcb  
S
For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2005-06-09  
1

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