Datasheet > BFP540FESD_10

BFP540FESD_10

更新时间： 2024-01-12 20:28:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	501K
描述
NPN Silicon RF Transistor

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BFP540FESD_10 数据手册

BFP540FESD

NPN Silicon RF Transistor*

• For ESD protected high gain low noise amplifier

• Excellent ESD performance

typical value 1000 V (HBM)

• Outstanding G = 20 dB

Noise Figure F = 0.9 dB



• SIEGET 45 - Line

• Pb-free (ROHS compliant) package

• Qualified according AEC Q101

* Short term description

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP540FESD

Marking

AUs

Pin Configuration

1=B 2=E 3=C 4=E

Package

TSFP-4

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

T > 0°C

CEO

4.5

T ≤ 0°C

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CES

CBO

EBO

°C

Base current

250

Total power dissipation

tot

T ≤ 80 °C

150

-65 ... 150

Junction temperature

Ambient temperature

Storage temperature

stg

¹Pb-containing package may be available upon special request

is measured on the collector lead at the soldering point to the pcb

2010-03-12

12 3 4 5 6

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