BFP540F

更新时间： 2024-01-09 07:29:07

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
6页	191K
描述
NPN Silicon RF Transistor

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中文翻译

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BFP540F 数据手册

BFP540F

NPN Silicon RF Transistor

XYs

• For highest gain low noise amplifier

at 1.8 GHz

• Outstanding G = 20 dB

Noise Figure F = 0.9 dB

• Gold metallization for high reliability

• SIEGET 45 - Line

TSFP-4

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

BFP540F

Marking

ATs*

Pin Configuration

1=B 2=E 3=C 4=E

Package

TSFP-4

* Pin configuration fixed relative to marking (see package picture)

Maximum Ratings

Parameter

Symbol

Value

Unit

4.5

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CEO

CES

CBO

EBO

Base current

Total power dissipation T ≤ 80°C

250

150

-65 ... 150

°C

tot

Junction temperature

Ambient temperature

Storage temperature

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

Value

≤ 280

Unit

K/W

thJS

T is measured on the collector lead at the soldering point to the pcb

For calculation of R

please refer to Application Note Thermal Resistance

thJA

Jan-28-2004

12 3 4 5 6

中文翻译

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