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BFP540-E6327 PDF预览

BFP540-E6327

更新时间: 2024-11-11 21:11:15
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
10页 542K
描述
Transistor

BFP540-E6327 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83最大集电极电流 (IC):0.08 A
配置:Single最小直流电流增益 (hFE):50
湿度敏感等级:1最高工作温度:150 °C
极性/信道类型:NPN最大功率耗散 (Abs):0.25 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):21000 MHzBase Number Matches:1

BFP540-E6327 数据手册

 浏览型号BFP540-E6327的Datasheet PDF文件第2页浏览型号BFP540-E6327的Datasheet PDF文件第3页浏览型号BFP540-E6327的Datasheet PDF文件第4页浏览型号BFP540-E6327的Datasheet PDF文件第5页浏览型号BFP540-E6327的Datasheet PDF文件第6页浏览型号BFP540-E6327的Datasheet PDF文件第7页 
BFP540  
NPN Silicon RF Transistor  
For highest gain low noise amplifier  
3
at 1.8 GHz  
2
1
4
Outstanding G = 21.5 dB  
ms  
Noise Figure F = 0.9 dB  
Gold metallization for high reliability  
SIEGET 45 - Line  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
1)  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFP540  
Marking  
ATs  
Pin Configuration  
1=B 2=E 3=C 4=E  
Package  
SOT343  
-
-
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
T > 0°C  
T 0°C  
A
V
CEO  
4.5  
4
A
14  
14  
1
80  
8
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CES  
CBO  
EBO  
mA  
mW  
°C  
I
I
C
Base current  
B
2)  
250  
Total power dissipation  
P
tot  
T 77°C  
S
150  
-65 ... 150  
-65 ... 150  
Junction temperature  
Ambient temperature  
Storage temperature  
T
T
T
j
A
stg  
1Pb-containing package may be available upon special request  
2T is measured on the collector lead at the soldering point to the pcb  
S
2009-12-04  
1

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