Datasheet > BFP540_09

BFP540_09

更新时间： 2024-01-12 19:08:11

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
10页	544K
描述
NPN Silicon RF Transistor

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BFP540_09 数据手册

BFP540

NPN Silicon RF Transistor

• For highest gain low noise amplifier

at 1.8 GHz

• Outstanding G = 21.5 dB

Noise Figure F = 0.9 dB

• Gold metallization for high reliability



• SIEGET 45 - Line

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Type

BFP540

Marking

ATs

Pin Configuration

1=B 2=E 3=C 4=E

Package

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

T > 0°C

T ≤ 0°C

CEO

4.5

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CES

CBO

EBO

°C

Base current

250

Total power dissipation

tot

T ≤ 77°C

150

-65 ... 150

Junction temperature

Ambient temperature

Storage temperature

stg

¹Pb-containing package may be available upon special request

²T is measured on the collector lead at the soldering point to the pcb

2009-12-04

12 3 4 5 6 7...10

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