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BFP520H6327XTSA1 PDF预览

BFP520H6327XTSA1

更新时间: 2024-11-11 14:41:07
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器光电二极管晶体管
页数 文件大小 规格书
9页 568K
描述
RF Small Signal Bipolar Transistor, 0.04A I(C), 1-Element, L Band, Silicon, NPN, ROHS COMPLIANT PACKAGE-4

BFP520H6327XTSA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:6 weeks
风险等级:1.66其他特性:LOW NOISE
最大集电极电流 (IC):0.04 A基于收集器的最大容量:0.13 pF
集电极-发射极最大电压:2.5 V配置:SINGLE
最小直流电流增益 (hFE):70最高频带:L BAND
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.1 W参考标准:AEC-Q101
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):45000 MHzBase Number Matches:1

BFP520H6327XTSA1 数据手册

 浏览型号BFP520H6327XTSA1的Datasheet PDF文件第2页浏览型号BFP520H6327XTSA1的Datasheet PDF文件第3页浏览型号BFP520H6327XTSA1的Datasheet PDF文件第4页浏览型号BFP520H6327XTSA1的Datasheet PDF文件第5页浏览型号BFP520H6327XTSA1的Datasheet PDF文件第6页浏览型号BFP520H6327XTSA1的Datasheet PDF文件第7页 
BFP520  
Low Noise Silicon Bipolar RF Transistor  
Low noise amplifier designed for low voltage  
applications, ideal for 1.2 V or 1.8 V supply voltage  
Common e.g. in cordless phones, satellite  
receivers and oscillators up to 22 GHz  
3
2
1
4
High gain and low noise at high frequencies  
due to high transit frequency f = 45 GHz  
T
Easy to use Pb-free (RoHS compliant) and  
halogen free industry standard package with  
visible leads  
Qualification report according to AEC-Q101  
available  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
BFP520  
Marking  
APs  
Pin Configuration  
1=B 2=E 3=C 4=E  
Package  
SOT343  
-
-
Maximum Ratings at T = 25 °C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
V
CEO  
T = 25 °C  
2.5  
2.4  
10  
10  
1
50  
5
125  
A
T = -55 °C  
A
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
Base current  
Total power dissipation  
V
V
V
CES  
CBO  
EBO  
mA  
mW  
°C  
I
C
I
B
1)  
P
tot  
T 105 °C  
Junction temperature  
S
150  
T
J
Storage temperature  
T
-55 ... 150  
Stg  
1
T is measured on the emitter lead at the soldering point to pcb  
S
1
2015-10-12  

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