Datasheet > AUIRFSL4410Z

AUIRFSL4410Z

更新时间： 2024-11-24 03:50:03

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
13页	289K
描述
Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN

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AUIRFSL4410Z 数据手册

PD - 96405A

AUTOMOTIVE GRADE

AUIRFS4410Z

AUIRFSL4410Z

Features

HEXFET^®Power MOSFET

Advanced Process Technology

UltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

V_DSS

R_DS(on)typ.

max.

100V

7.2m

9.0m

I_D

97A

Description

Specifically designed for Automotive applications, this

HEXFET^®Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per

siliconarea. Additionalfeaturesofthisdesign area175°C

junctionoperatingtemperature, fastswitchingspeedand

improved repetitive avalanche rating . These features

combine to make this design an extremely efficient and

reliable device for use in Automotive applications and a

wide variety of other applications.

D²Pak

AUIRFS4410Z

TO-262

AUIRFSL4410Z

Gate

Drain

Source

Absolute Maximum Ratings

StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications

is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal

resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(T_A)

is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

390

P_D@T_C= 25°C

230

Maximum Power Dissipation

Linear Derating Factor

1.5

W/°C

V_GS

± 20

Gate-to-Source Voltage

242

Peak Diode Recovery

Single Pulse Avalanche Energy

dv/dt

E_{AS (Thermally limited)}

V/ns

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b,

Repetitive Avalanche Energy

E_AR

T_J

-55 to + 175

300

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

°C

Thermal Resistance

Parameter

Typ.

–––

Max.

0.65

Units

R_θ

Junction-to-Case

°C/W

Junction-to-Ambient (PCB Mount) , D²Pak

R_θJA

–––

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

10/4/11

12 3 4 5 6 7...13

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