Datasheet > AUIRFSL6535

AUIRFSL6535

更新时间： 2024-11-26 12:30:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
13页	272K
描述
Advanced Process Technology Low On-Resistance

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中文翻译

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AUIRFSL6535 数据手册

AUTOMOTIVE GRADE

AUIRFS6535

AUIRFSL6535

Features

HEXFET^®Power MOSFET

●

Advanced Process Technology

LowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

V_(BR)DSS

300V

R_DS(on)typ.

148m

185m

19A



max.

I_D

Description

SpecificallydesignedforAutomotiveapplications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistancepersiliconarea. Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitiveavalancherating. Thesefeaturescom-

bine to make this design an extremely efficient

andreliabledeviceforuseinAutomotiveapplica-

tions and a wide variety of other applications.

D²Pak

AUIRFS6535

TO-262

AUIRFSL6535

Drain

Gate

Source

Base part

number

Package Type

Standard Pack

Orderable Part Number

Form

Tube

Quantity

AUIRFSL6535

AUIRFS6535

TO-262

D2Pak

AUIRFSL6535

AUIRFS6535

Tape and Reel Left

Tape and Reel Right

800

AUIRFS6535TRL

AUIRFS6535TRR

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Max.

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V

I_D@ T_C= 100°C Continuous Drain Current, VGS @ 10V

Pulsed Drain Current

I_DM

100

P_D@T_C= 25°C

Power Dissipation

210

1.4

W/°C

Linear Derating Factor

V_GS

E_AS

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy (Thermally Limited)

216

310

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

E_AR

T_J

Operating Junction and

-55 to + 175

300

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Parameter

Typ.

–––

Max.

0.71

Units

R_

Junction-to-Case

Junction-to-Ambient (PCB Mount)

°C/W

–––

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

July 23, 2012

12 3 4 5 6 7...13

中文翻译

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与AUIRFSL6535相关器件

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AUIRFSL8407	INFINEON	获取价格	Advanced Process Technology New Ultra Low On-Resistance
AUIRFSL8408	INFINEON	获取价格	NEW ULTRA LOW ON-RESISTANCE
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