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AUIRFSL8408 PDF预览

AUIRFSL8408

更新时间： 2024-11-23 12:54:35
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
13页 297K
描述
NEW ULTRA LOW ON-RESISTANCE

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AUIRFSL8408 数据手册

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AUIRFS8408  
AUIRFSL8408  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
Advanced Process Technology  
VDSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
40V  
New Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
1.3m  
Ω
Ω
1.6m  
317A  
195A  
Description  
Specifically designed for Automotive applications, this HEXFET®  
PowerMOSFETutilizesthelatestprocessingtechniquestoachieve  
extremely low on-resistance per silicon area. Additional features  
of this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating. These  
features combine to make this product an extremely efficient and  
reliable device for use in Automotive and wide variety of other  
applications.  
D
D
S
D
S
S
D
G
G
G
D2Pak  
TO-262  
Applications  
AUIRFSL8408  
AUIRFS8408  
l
l
l
l
l
Electric Power Steering (EPS)  
Battery Switch  
Start/Stop Micro Hybrid  
Heavy Loads  
SMPS  
G
Gate  
D
Drain  
S
Source  
Ordering Information  
Base part number  
Package Type  
Standard Pack  
Form  
Complete Part Number  
Quantity  
50  
AUIRFSL8408  
AUIRFS8408  
TO-262  
D2Pak  
Tube  
Tube  
AUIRFSL8408  
AUIRFS8408  
50  
Tape and Reel Left  
Tape and Reel Right  
800  
800  
AUIRFS8408TRL  
AUIRFS8408TRR  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
Parameter  
Max.  
317  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
224  
195  
A
1270  
PD @TC = 25°C  
294  
W
Maximum Power Dissipation  
1.96  
Linear Derating Factor  
W/°C  
V
VGS  
TJ  
± 20  
Gate-to-Source Voltage  
-55 to + 175  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Avalanche Characteristics  
EAS (Thermally limited)  
Single Pulse Avalanche Energy  
490  
800  
mJ  
EAS (tested)  
IAR  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
See Fig. 14, 15, 24a, 24b  
A
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.51  
40  
Units  
°C/W  
RθJC  
Junction-to-Case  
RθJA  
–––  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com  
© 2013 International Rectifier  
April 25, 2013  
1234567...13

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