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AUIRFSL8407 PDF预览

AUIRFSL8407

更新时间： 2024-11-23 12:53:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 336K
描述
Advanced Process Technology New Ultra Low On-Resistance

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AUIRFSL8407 数据手册

 浏览型号AUIRFSL8407的Datasheet PDF文件第2页浏览型号AUIRFSL8407的Datasheet PDF文件第3页浏览型号AUIRFSL8407的Datasheet PDF文件第4页浏览型号AUIRFSL8407的Datasheet PDF文件第5页浏览型号AUIRFSL8407的Datasheet PDF文件第6页浏览型号AUIRFSL8407的Datasheet PDF文件第7页 
AUIRFB8407  
AUIRFS8407  
AUIRFSL8407  
AUTOMOTIVE GRADE  
Features  
HEXFET® Power MOSFET  
l
l
l
l
l
l
Advanced Process Technology  
New Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
VDSS  
RDS(on)  
40V  
typ. 1.4mΩ  
D
S
(SMD version) max 1.8m  
Ω
G
250A  
ID  
ID  
(Silicon Limited)  
(Package Limited)  
Description  
Specifically designed for Automotive applications, this  
HEXFET® Power MOSFET utilizes the latest processing  
techniquestoachieveextremelylowon-resistancepersilicon  
area. Additional features of this design are a 175°C junction  
operating temperature, fast switching speed and improved  
repetitive avalanche rating. These features combine to make  
this design an extremely efficient and reliable device for use  
in Automotive applications and wide variety of other  
applications.  
195A  
D
D
D
S
S
S
D
D
G
G
G
D2Pak  
AUIRFS8407  
TO-262  
AUIRFSL8407  
TO-220AB  
Applications  
AUIRFB8407  
l
l
l
l
l
Electric Power Steering (EPS)  
Battery Switch  
Start/Stop Micro Hybrid  
Heavy Loads  
G
Gate  
D
Drain  
S
Source  
DC-DC Applications  
Ordering Information  
Base part number  
Package Type  
Standard Pack  
Complete Part  
Number  
AUIRFB8407  
AUIRFSL8407  
AUIRFS8407  
AUIRFS8407TRL  
Form  
Tube  
Tube  
Quantity  
50  
AUIRFB8407  
AUIRFSL8407  
AUIRFS8407  
AUIRFS8407  
TO-220  
TO-262  
D2Pak  
D2Pak  
50  
50  
800  
Tube  
Tape and Reel Left  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and  
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-  
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under  
board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Parameter  
Max.  
250  
Units  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
Pulsed Drain Current  
180  
A
195  
1000  
230  
PD @TC = 25°C  
Maximum Power Dissipation  
W
1.5  
Linear Derating Factor  
W/°C  
V
± 20  
VGS  
TJ  
Gate-to-Source Voltage  
-55 to + 175  
Operating Junction and  
°C  
TSTG  
Storage Temperature Range  
300  
Soldering Temperature, for 10 seconds (1.6mm from case)  
Mounting torque, 6-32 or M3 screw  
10lbf in (1.1N m)  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
350  
500  
mJ  
EAS (tested)  
Single Pulse Avalanche Energy Tested Value  
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b  
A
Repetitive Avalanche Energy  
EAR  
mJ  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
1
www.irf.com  
© 2013 International Rectifier  
April 25, 2013  
1234567...14

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