Datasheet > AUIRFSL8407

AUIRFSL8407

更新时间： 2024-10-02 12:53:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	336K
描述
Advanced Process Technology New Ultra Low On-Resistance

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中文翻译

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数据手册

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AUIRFSL8407 数据手册

AUIRFB8407

AUIRFS8407

AUIRFSL8407

AUTOMOTIVE GRADE

Features

HEXFET^®Power MOSFET

Advanced Process Technology

New Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

V_DSS

R_DS(on)

40V

typ. 1.4mΩ

_{(SMD version)}max 1.8m

250A

I_D

(Silicon Limited)

(Package Limited)

Description

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest processing

techniquestoachieveextremelylowon-resistancepersilicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating. These features combine to make

this design an extremely efficient and reliable device for use

in Automotive applications and wide variety of other

applications.

195A

D²Pak

AUIRFS8407

TO-262

AUIRFSL8407

TO-220AB

Applications

AUIRFB8407

Electric Power Steering (EPS)

Battery Switch

Start/Stop Micro Hybrid

Heavy Loads

Gate

Drain

Source

DC-DC Applications

Ordering Information

Base part number

Package Type

Standard Pack

Complete Part

Number

AUIRFB8407

AUIRFSL8407

AUIRFS8407

AUIRFS8407TRL

Form

Tube

Quantity

AUIRFB8407

AUIRFSL8407

AUIRFS8407

TO-220

TO-262

D2Pak

800

Tube

Tape and Reel Left

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

250

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

180

195

1000

230

P_D@T_C= 25°C

Maximum Power Dissipation

1.5

Linear Derating Factor

W/°C

± 20

V_GS

T_J

Gate-to-Source Voltage

-55 to + 175

Operating Junction and

°C

T_STG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

10lbf in (1.1N m)

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

350

500

E_AS(tested)

Single Pulse Avalanche Energy Tested Value

Avalanche Current

I_AR

See Fig. 14, 15, 22a, 22b

Repetitive Avalanche Energy

E_AR

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

April 25, 2013

12 3 4 5 6 7...14

中文翻译

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与AUIRFSL8407相关器件

型号	品牌	获取价格	描述	数据表
AUIRFSL8408	INFINEON	获取价格	NEW ULTRA LOW ON-RESISTANCE
AUIRFSL8409	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFU024N	INFINEON	获取价格	Advanced Planar Technology
AUIRFU3607	INFINEON	获取价格	Advanced Process Technology
AUIRFU4104	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFU4104	KERSEMI	获取价格	AUTOMOTIVE GRADE
AUIRFU4105Z	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFU4105Z	KERSEMI	获取价格	AUTOMOTIVE GRADE
AUIRFU4292	INFINEON	获取价格	Advanced Process Technology
AUIRFU4615	INFINEON	获取价格	Advanced Process Technology Low On-Resistance

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