Datasheet > AUIRFSL8405

AUIRFSL8405

更新时间： 2024-01-11 13:52:30

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	357K
描述
Advanced Process Technology New Ultra Low On-Resistance

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中文翻译

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数据手册

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AUIRFSL8405 数据手册

AUIRFS8405

AUIRFSL8405

AUTOMOTIVE GRADE

HEXFET^®Power MOSFET

Features

Advanced Process Technology

New Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

Automotive Qualified *

V_DSS

40V

R_DS(on)typ.

max.

1.9mΩ

2.3mΩ

I_D

193A

(Silicon Limited)

I_D

120A

(Package Limited)

Description

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest processing

techniquestoachieveextremelylowon-resistancepersilicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating. These features combine to make

this design an extremely efficient and reliable device for use

inAutomotiveapplicationsandwidevarietyofotherapplications.

D²Pak

TO-262

AUIRFSL8405

AUIRFS8405

Applications

Electric Power Steering (EPS)

Battery Switch

Start/Stop Micro Hybrid

Heavy Loads

Gate

Drain

Source

DC-DCApplications

Base part number

Package Type

Standard Pack

Form

Complete Part Number

Quantity

AUIRFSL8405

AUIRFS8405

TO-262

D2Pak

Tube

AUIRFSL8405

AUIRFS8405

Tape and Reel Left

Tape and Reel Right

800

AUIRFS8405TRL

AUIRFS8405TRR

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

193

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

137

120

904

163

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

1.1

Linear Derating Factor

± 20

V_GS

T_J

Gate-to-Source Voltage

-55 to + 175

Operating Junction and

°C

T_STG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds (1.6mm from case)

Mounting torque, 6-32 or M3 screw

10lbf in (1.1N m)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

April 30, 2013

12 3 4 5 6 7...14

中文翻译

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与AUIRFSL8405相关器件

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AUIRFSL8407	INFINEON	获取价格	Advanced Process Technology New Ultra Low On-Resistance
AUIRFSL8408	INFINEON	获取价格	NEW ULTRA LOW ON-RESISTANCE
AUIRFSL8409	INFINEON	获取价格	AUTOMOTIVE GRADE
AUIRFU024N	INFINEON	获取价格	Advanced Planar Technology
AUIRFU3607	INFINEON	获取价格	Advanced Process Technology
AUIRFU4104	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFU4104	KERSEMI	获取价格	AUTOMOTIVE GRADE
AUIRFU4105Z	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRFU4105Z	KERSEMI	获取价格	AUTOMOTIVE GRADE
AUIRFU4292	INFINEON	获取价格	Advanced Process Technology

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