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AUIRFSL4310 PDF预览

AUIRFSL4310

更新时间： 2024-11-23 12:49:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
13页 340K
描述
HEXFET Power MOSFET

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中文翻译

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AUIRFSL4310 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：ROHS COMPLIANT, PLASTIC, TO-262, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.22
Is Samacsys：N其他特性：AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
雪崩能效等级（Eas）：980 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：100 V最大漏极电流 (Abs) (ID)：75 A
最大漏极电流 (ID)：75 A最大漏源导通电阻：0.007 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-262AA
JESD-30 代码：R-PSIP-T3JESD-609代码：e3
湿度敏感等级：1元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：175 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：IN-LINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：300 W最大脉冲漏极电流 (IDM)：550 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：MATTE TIN OVER NICKEL
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

AUIRFSL4310 数据手册

 浏览型号AUIRFSL4310的Datasheet PDF文件第2页浏览型号AUIRFSL4310的Datasheet PDF文件第3页浏览型号AUIRFSL4310的Datasheet PDF文件第4页浏览型号AUIRFSL4310的Datasheet PDF文件第5页浏览型号AUIRFSL4310的Datasheet PDF文件第6页浏览型号AUIRFSL4310的Datasheet PDF文件第7页 
PD - 96324  
AUIRFS4310  
AUTOMOTIVE GRADE  
AUIRFSL4310  
HEXFET® Power MOSFET  
Features  
l
l
l
l
l
l
l
Advanced Process Technology  
V(BR)DSS  
100V  
Ultra Low On-Resistance  
175°C Operating Temperature  
Fast Switching  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
D
S
RDS(on) typ.  
max.  
5.6m  
7.0m  
130A  
75A  
Ω
Ω
G
ID (Silicon Limited)  
ID (Package Limited)  
Description  
Specifically designed for Automotive applications, this HEXFET®  
Power MOSFET utilizes the latest processing techniques to achieve  
extremely low on-resistance per silicon area. Additional features of  
this design are a 175°C junction operating temperature, fast  
switching speed and improved repetitive avalanche rating . These  
features combine to make this design an extremely efficient and  
reliable device for use in Automotive applications and a wide variety  
of other applications.  
S
S
D
D
G
G
D2Pak  
AUIRFS4310  
TO-262  
AUIRFSL4310  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings  
only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and  
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Package Limited)  
Pulsed Drain Current  
130  
92  
A
75  
550  
PD @TC = 25°C  
300  
Maximum Power Dissipation  
W
W/°C  
V
2.0  
Linear Derating Factor  
VGS  
EAS  
IAR  
± 20  
980  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally limited)  
Avalanche Current  
mJ  
A
See Fig. 14, 15, 22a, 22b,  
EAR  
dV/dt  
TJ  
Repetitive Avalanche Energy  
mJ  
V/ns  
14  
Peak Diode Recovery  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
°C  
300 (1.6mm from case)  
10lb in (1.1N m)  
Soldering Temperature, for 10 seconds  
Mounting torque, 6-32 or M3 screw  
Thermal Resistance  
Parameter  
Typ.  
–––  
Max.  
0.50  
40  
Units  
RθJC  
Junction-to-Case  
°C/W  
RθJA  
–––  
Junction-to-Ambient (PCB Mount)  
HEXFET® is a registered trademark of International Rectifier.  
*Qualification standards can be found at http://www.irf.com/  
www.irf.com  
1
07/20/10  
1234567...13

中文翻译

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AUIRFSL4310 替代型号

型号 品牌 替代类型 描述 数据表
IRFSL4310PBF INFINEON

类似代替

 HEXFET㈢Power MOSFET
IRFSL4310 INFINEON

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 HEXFET Power MOSFET

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