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AUIRF1404S PDF预览

AUIRF1404S

更新时间: 2024-02-21 11:52:06
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 303K
描述
Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3

AUIRF1404S 数据手册

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AUIRF1404S  
AUIRF1404L  
AUTOMOTIVE GRADE  
HEXFET® Power MOSFET  
Features  
Advanced Planar Technology  
Dynamic dv/dt Rating  
175°C Operating Temperature  
Fast Switching  
VDSS  
40V  
RDS(on) typ.  
3.5m  
4.0m  
162A  
75A  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
Fully Avalanche Rated  
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
D
D
Description  
S
Specifically designed for Automotive applications, this Stripe  
Planar design of HEXFET® Power MOSFETs utilizes the latest  
processing techniques to achieve low on-resistance per silicon  
area. This benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power MOSFETs are well  
known for, provides the designer with an extremely efficient and  
reliable device for use in Automotive and a wide variety of other  
applications.  
S
D
G
G
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Tube  
Base part number  
AUIRF1404L  
Package Type  
TO-262  
Orderable Part Number  
Quantity  
50  
AUIRF1404L  
AUIRF1404S  
AUIRF1404STRL  
Tube  
Tape and Reel Left  
50  
800  
AUIRF1404S  
D2-Pak  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress  
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not  
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance  
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless  
otherwise specified.  
Symbol  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
162  
ID @ TC = 100°C  
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)   
115  
A
Continuous Drain Current, VGS @ 10V (Package Limited)  
75  
IDM  
Pulsed Drain Current   
Maximum Power Dissipation  
Maximum Power Dissipation  
Linear Derating Factor  
650  
3.8  
PD @TA = 25°C  
PD @TC = 25°C  
W
200  
1.3  
W/°C  
V
mJ  
A
VGS  
EAS  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally Limited)   
± 20  
519  
IAR  
Avalanche Current   
95  
20  
EAR  
Dv/dt  
TJ  
Repetitive Avalanche Energy   
Peak Diode Recovery   
mJ  
V/ns  
5.0  
Operating Junction and  
-55 to + 175  
TSTG  
Storage Temperature Range  
°C  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Thermal Resistance  
Symbol  
Parameter  
Junction-to-Case   
Typ.  
–––  
Max.  
0.75  
Units  
RJC  
RJA  
°C/W  
Junction-to-Ambient ( PCB Mount, steady state)   
40  
HEXFET® is a registered trademark of Infineon.  
*Qualification standards can be found at www.infineon.com  
1
2015-11-11  

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