AUIRF1404S
AUIRF1404L
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
Advanced Planar Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
VDSS
40V
RDS(on) typ.
3.5m
4.0m
162A
75A
max.
ID (Silicon Limited)
ID (Package Limited)
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
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Description
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Specifically designed for Automotive applications, this Stripe
Planar design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
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D
G
G
D2Pak
TO-262
AUIRF1404L
AUIRF1404S
G
D
S
Gate
Drain
Source
Standard Pack
Form
Tube
Base part number
AUIRF1404L
Package Type
TO-262
Orderable Part Number
Quantity
50
AUIRF1404L
AUIRF1404S
AUIRF1404STRL
Tube
Tape and Reel Left
50
800
AUIRF1404S
D2-Pak
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
162
ID @ TC = 100°C
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
115
A
Continuous Drain Current, VGS @ 10V (Package Limited)
75
IDM
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
650
3.8
PD @TA = 25°C
PD @TC = 25°C
W
200
1.3
W/°C
V
mJ
A
VGS
EAS
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
± 20
519
IAR
Avalanche Current
95
20
EAR
Dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery
mJ
V/ns
5.0
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
–––
Max.
0.75
Units
RJC
RJA
°C/W
Junction-to-Ambient ( PCB Mount, steady state)
40
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
1
2015-11-11