AUIRF1404STRL

更新时间： 2024-01-17 15:42:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
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15页	363K
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AUIRF1404STRL 数据手册

PD - 97460

AUIRF1404Z

AUIRF1404ZS

AUTOMOTIVE GRADE

AUIRF1404ZL

Features

HEXFET^®Power MOSFET

Advanced Process Technology

LowOn-Resistance

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

V_(BR)DSS

40V

R_DS(on)max.

3.7m

180A

Ω

I_{D (Silicon Limited)}

I_{D (Package Limited)}

Automotive Qualified *

160A

Description

SpecificallydesignedforAutomotiveapplications,

this HEXFET^®Power MOSFET utilizes the latest

processing techniques to achieve extremely low

on-resistancepersiliconarea. Additionalfeatures

of this design are a 175°C junction operating

temperature, fast switching speed and improved

repetitiveavalancherating. Thesefeaturescom-

bine to make this design an extremely efficient

andreliabledeviceforuseinAutomotiveapplica-

tions and a wide variety of other applications.

D²Pak

TO-262

AUIRF1404ZL

TO-220AB

AUIRF1404Z

AUIRF1404ZS

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Max.

Units

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

180

I_D@ T_C= 100°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

120

160

710

I_D@ T_C= 25°C Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current

I_DM

P_D@T_C= 25°C

Power Dissipation

200

1.3

± 20

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally Limited)

V_GS

E_AS

330

480

Single Pulse Avalanche Energy Tested Value

Avalanche Current

E_AS(tested )

I_AR

See Fig.12a, 12b, 15, 16

Repetitive Avalanche Energy

E_AR

T_J

Operating Junction and

-55 to + 175

T_STG

Storage Temperature Range

°C

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting Torque, 6-32 or M3 screw

300

10 lbf in (1.1N m)

Thermal Resistance

Parameter

Typ.

–––

Max.

0.75

Units

°C/W

R_θJC

Junction-to-Case

R_θCS

R_θJA

0.50

–––

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient

–––

Junction-to-Ambient (PCB Mount)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

02/19/2010

12 3 4 5 6 7...15

中文翻译

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AUIRF1404STRL 替代型号

型号	品牌	替代类型	描述	数据表
IRF1404S	INFINEON	类似代替	Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=1
IRF1404STRLPBF	INFINEON	功能相似	Advanced Process Technology
IRF1404SPBF	INFINEON	功能相似	HEXFET® Power MOSFET

与AUIRF1404STRL相关器件

型号	品牌	获取价格	描述	数据表
AUIRF1404STRR	INFINEON	获取价格	Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Met
AUIRF1404Z	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF1404ZL	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF1404ZS	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF1404ZSTRL	INFINEON	获取价格	Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, M
AUIRF1405	INFINEON	获取价格	HEXFETÂ® Power MOSFET
AUIRF1405ZL	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF1405ZS	INFINEON	获取价格	HEXFET® Power MOSFET
AUIRF1405ZS-7P	INFINEON	获取价格	Power Field-Effect Transistor,
AUIRF1405ZS-7PTRL	INFINEON	获取价格	Power Field-Effect Transistor

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