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AO4607 PDF预览

AO4607

更新时间: 2024-10-30 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
8页 197K
描述
Complementary Enhancement Mode Field Effect Transistor

AO4607 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.8
Is Samacsys:NBase Number Matches:1

AO4607 数据手册

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AO4607  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4607 uses advanced trench  
technology MOSFETs to provide excellen  
RDS(ON) and low gate charge. The  
complementary MOSFETs may be used  
in inverter and other applications. A  
Schottky diode is co-packaged with the n-  
channel FET to minimize body diode  
losses. AO4607 is Pb-free (meets ROHS  
& Sony 259 specifications). AO4607L is  
a Green Product ordering option.  
AO4607 and AO4607L are electrically  
identical.  
n-channel  
p-channel  
-30V  
-6A (VGS=1-0V)  
RDS(ON)  
VDS (V) = 30V  
ID = 6.9A (VGS=10V)  
RDS(ON)  
< 28m(VGS=10V)  
< 42m(VGS=4.5V)  
< 35m(VGS = -10V)  
< 58m(VGS =- 4.5V)  
SCHOTTKY  
VDS (V) = 30V, IF = 3A, VF<0.5V@1A  
D
D
1
2
3
4
8
7
6
5
S2/A  
G2  
S1  
D2/K  
D2/K  
D1  
K
A
G1  
D1  
G
G
S
S2  
SOIC-8  
n-channel  
p-channel  
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Parameter  
Symbol  
Max n-channel  
Max p-channel Units  
VDS  
Drain-Source Voltage  
30  
-30  
V
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
Pulsed Drain CurrentB  
±20  
6.9  
±20  
TA=25°C  
TA=70°C  
-6  
A
ID  
5.8  
-5  
-30  
IDM  
30  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.28  
-55 to 150  
1.28  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Parameter  
Symbol  
Maximum Schottky  
Units  
VDS  
Reverse Voltage  
30  
3
V
Continuous Forward  
Current A  
Pulsed Diode Forward CurrentB  
TA=25°C  
TA=70°C  
A
ID  
2
20  
IDM  
TA=25°C  
2
PD  
W
Power DissipationA  
TA=70°C  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Alpha & Omega Semiconductor, Ltd.  

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