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AO4612 PDF预览

AO4612

更新时间: 2024-09-13 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管场效应晶体管
页数 文件大小 规格书
7页 141K
描述
Complementary Enhancement Mode Field Effect Transistor

AO4612 数据手册

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AO4612  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
n-channel  
VDS (V) = 60V  
ID = 4.5A (VGS=10V)  
RDS(ON)  
p-channel  
-60V  
The AO4612 uses advanced trench  
technology MOSFETs to provide excellent  
RDS(ON) and low gate charge. The  
-3.2A (VGS = -10V)  
RDS(ON)  
complementary MOSFETs may be used  
in H-bridge, Inverters and other  
< 56m(VGS=10V)  
< 77m(VGS=4.5V)  
< 105m(VGS = -10V)  
< 135m(VGS = -4.5V)  
applications. Standard product AO4612 is  
Pb-free (meets ROHS & Sony 259  
specifications). AO4612L is a Green  
Product ordering option. AO4612 and  
AO4612L are electrically identical.  
D1  
D2  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G1  
G2  
S1  
S2  
SOIC-8  
p-channel  
n-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max n-channel  
Max p-channel  
Units  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
60  
±20  
-60  
±20  
V
V
VGS  
TA=25°C  
TA=70°C  
4.5  
-3.2  
Continuous Drain  
Current A  
Pulsed Drain Current B  
A
ID  
3.6  
-2.6  
IDM  
20  
-20  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power Dissipation  
1.28  
-55 to 150  
1.28  
-55 to 150  
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Device  
Typ  
48  
74  
35  
48  
74  
35  
Max Units  
62.5 °C/W  
110 °C/W  
60 °C/W  
62.5 °C/W  
110 °C/W  
40 °C/W  
Maximum Junction-to-Ambient A  
n-ch  
n-ch  
n-ch  
p-ch  
p-ch  
p-ch  
t 10s  
RθJA  
Maximum Junction-to-Ambient A  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
RθJL  
RθJA  
RθJL  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
Alpha & Omega Semiconductor, Ltd.  

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