Datasheet > AO4614

AO4614

更新时间： 2024-11-19 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
9页	357K
描述
种类:N+P-Channel;漏源电压（Vdss）:N：40V ;P：-40V;持续漏极电流（Id）（在25°C时）:N：6A ;P：-5A;Vgs(th)(V):±20;漏源导通电阻:N：30mΩ ;P：39mΩ@10V

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AO4614 数据手册

UMW

AO4614

40V P-Channel and N-Channel MOSFET

General Description

The AO4614 uses advanced trench technology

MOSFETs to provide excellent R_DS(ON)and low gate

charge. The complementary MOSFETs may be used

in H-bridge, Inverters and other applications.

n-channel

p-channel

Product Summary

N-Channel

V_DS(V) = 40V,

I_D= 6A (V_GS=10V)

R_DS(ON)

P-Channel

-40V

-5A (VGS=-10V)

< 20mΩ (V_GS=10V)

< 39mΩ (VGS= -10V)

< 26mΩ (V_GS=4.5V) < 50mΩ (VGS= -4.5V)

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

Drain-Source Voltage

V_DS

-40

Gate-Source Voltage

V_GS

±20

T_A=25°C

T_A=70°C

-5

-4

Continuous Drain

Current ^A

Pulsed Drain Current ^B

Avalanche Current ^B

I_D

I_DM

I_AR

E_AR

-30

-20

Repetitive avalanche energy L=0.1mH ^B

9.8

T_A=25°C

Power Dissipation

T_A=70°C

P_D

1.28

-55 to 150

1.28

-55 to 150

Junction and Storage Temperature Range

T_J, T_STG

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

n-ch

62.5

110

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

R_θJA

R_θJL

Maximum Junction-to-Ambient ^A

t ≤ 10s

p-ch

62.5

110

°C/W

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

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与AO4614相关器件

型号	品牌	获取价格	描述	数据表
AO4614A	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
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AO4614B	AOS	获取价格	Complementary Enhancement Mode Field Effect Transistor
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