Datasheet > AO4614B

AO4614B

更新时间： 2024-09-13 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		/
页数	文件大小	规格书
7页	708K
描述
40V Dual P N-Channel MOSFET

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AO4614B 数据手册

AO4614B

40V Dual P + N-Channel MOSFET

General Description

The AO4614B uses advanced trench technology

MOSFETs to provide excellent R

_DS(ON)and low gate

in H-bridge, Inverters and other applications.

charge. The complementary MOSFETs may be used

Features

N-Channel

_DS(V) = 40V,

P-Channel

-40V

I_D= 6A (V_GS=10V)

R_DS(ON)

-5A (VGS=-10V)

< 30mΩ (V_GS=10V)

< 45mΩ (VGS= -10V)

< 38mΩ (V_GS=4.5V) < 63mΩ (VGS= -4.5V)

SOIC-8

Top View

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

Drain-Source Voltage

V_DS

-40

Gate-Source Voltage

V_GS

±20

-5

T_A=25°C

T_A=70°C

Continuous Drain

Current ^A

Pulsed Drain Current ^B

Avalanche Current ^B

I_D

-4

I_DM

I_AR

E_AR

-30

-20

Repetitive avalanche energy L=0.1mH ^B

9.8

T_A=25°C

Power Dissipation

T_A=70°C

P_D

1.28

-55 to 150

1.28

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

n-ch

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

n-ch

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

R_θJA

R_θJL

n-ch

Maximum Junction-to-Ambient ^A

t ≤ 10s

p-ch

62.5

110

°C/W

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

1/7

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