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AO4614B PDF预览

AO4614B

更新时间: 2024-11-18 12:51:27
品牌 Logo 应用领域
飞思卡尔 - FREESCALE /
页数 文件大小 规格书
7页 708K
描述
40V Dual P N-Channel MOSFET

AO4614B 数据手册

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AO4614B  
40V Dual P + N-Channel MOSFET  
General Description  
The AO4614B uses advanced trench technology  
MOSFETs to provide excellent R  
DS(ON) and low gate  
in H-bridge, Inverters and other applications.  
charge. The complementary MOSFETs may be used  
Features  
N-Channel  
DS (V) = 40V,  
P-Channel  
-40V  
V
ID = 6A (VGS=10V)  
RDS(ON)  
-5A (VGS=-10V)  
< 30m(VGS=10V)  
< 45m(VGS= -10V)  
< 38m(VGS=4.5V) < 63m(VGS= -4.5V)  
SOIC-8  
D2  
D1  
Top View  
S2  
D2  
D2  
D1  
D1  
1
2
3
4
8
G2  
S1  
G1  
7
6
5
G2  
G1  
S2  
S1  
n-channel  
p-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Max n-channel  
Max p-channel  
Units  
Drain-Source Voltage  
VDS  
40  
-40  
V
Gate-Source Voltage  
VGS  
±20  
±20  
-5  
V
TA=25°C  
TA=70°C  
6
Continuous Drain  
Current A  
Pulsed Drain Current B  
Avalanche Current B  
ID  
5
-4  
A
IDM  
IAR  
EAR  
30  
14  
-30  
-20  
20  
Repetitive avalanche energy L=0.1mH B  
9.8  
mJ  
W
TA=25°C  
Power Dissipation  
TA=70°C  
2
2
PD  
1.28  
-55 to 150  
1.28  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
°C  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Device  
n-ch  
Typ  
Max  
62.5  
110  
50  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
t 10s  
48  
74  
35  
RθJA  
Maximum Junction-to-Ambient A  
Steady-State  
n-ch  
Maximum Junction-to-Lead C  
Steady-State  
RθJL  
RθJA  
RθJL  
n-ch  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
t 10s  
p-ch  
p-ch  
p-ch  
48  
74  
35  
62.5  
110  
50  
°C/W  
°C/W  
°C/W  
Steady-State  
Maximum Junction-to-Lead C  
Steady-State  
1/7  
www.freescale.net.cn  

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