AO4614BL

更新时间： 2024-11-18 03:45:31

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	222K
描述
Complementary Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO4614BL 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.78

AO4614BL 数据手册

AO4614B

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 40V, I_D= 6A (V_GS=10V)

The AO4614B/L uses advanced trench technology

MOSFETs to provide excellent R_DS(ON)and low gate

charge. The complementary MOSFETs may be

used in H-bridge, Inverters and other applications.

AO4614B and AO4614BL are electrically identical.

R_DS(ON)< 30mΩ (V_GS=10V)

R_DS(ON)< 38mΩ (V_GS=4.5V)

p-channel

V_DS(V) = -40V, I_D= -5A (V_GS=-10V)

-RoHS Compliant

-AO4614BL is Halogen Free

_DS(ON)< 45mΩ (VGS= -10V)

R_DS(ON)< 63mΩ (VGS= -4.5V)

SOIC-8

p-channel

n-channel

Absolute Maximum Ratings T =25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

-40

±20

-5

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

Pulsed Drain Current^B

Avalanche Current^B

±20

T_A=25°C

T_A=70°C

I_D

-4

I_DM

I_AR

E_AR

-30

-20

Repetitive avalanche energy L=0.1mH^B

9.8

T_A=25°C

Power Dissipation

T_A=70°C

P_D

1.28

-55 to 150

1.28

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

n-ch

Typ

Max

62.5

110

Units

°C/W

Maximum Junction-to-Ambient^A

t ≤ 10s

R_θJA

R_θJL

R_θJA

R_θJL

Maximum Junction-to-Ambient^A

n-ch

Steady-State

Maximum Junction-to-Lead^C

Steady-State

n-ch

Maximum Junction-to-Ambient^A

p-ch

62.5

110

°C/W

t ≤ 10s

Steady-State

Maximum Junction-to-Lead^C

Steady-State

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6 7

中文翻译

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