Datasheet > AO4619

AO4619

更新时间： 2024-11-18 04:06:19

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	149K
描述
Complementary Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO4619 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8

AO4619 数据手册

AO4619

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 30V

I_D= 7.4A (V_GS=10V)

R_DS(ON)

The AO4619 uses advanced trench

technology MOSFETs to provide excellent

R_DS(ON)and low gate charge. The

complementary MOSFETs may be used in

inverter and other applications. Standard

Product AO4619 is Pb-free (meets ROHS

& Sony 259 specifications).

p-channel

-30V

-5.2A (V_GS= -10V)

R_DS(ON)

< 24mΩ (V_GS=10V)

< 36mΩ (V_GS=4.5V)

< 48mΩ (V_GS= -10V)

< 74mΩ (V_GS= -4.5V)

SOIC-8

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

-30

V_GS

Gate-Source Voltage

Continuous Drain

Current ^F

±20

-5.2

-4.2

-25

T_A=25°C

T_A=70°C

7.4

I_D

Pulsed Drain Current

I_DM

T_A=25°C

T_A=70°C

1.3

P_D

Power Dissipation^A

1.3

Avalanche Current

I_AR

Repetitive avalanche energy 0.3mH

Junction and Storage Temperature Range

E_AR

°C

T_J, T_STG

-55 to 150

Thermal Characteristics: n-channel and p-channel

Parameter

Maximum Junction-to-Ambient

Symbol

Device

Typ

Max Units

62.5 °C/W

110 °C/W

50 °C/W

t ≤ 10s

n-ch

R_θJA

Steady-State

t ≤ 10s

Steady-State

R_θJL

R_θJA

R_θJL

Maximum Junction-to-Lead

Maximum Junction-to-Ambient

p-ch

62.5 °C/W

110 °C/W

50 °C/W

Maximum Junction-to-Lead

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6 7

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