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AO4620 PDF预览

AO4620

更新时间: 2024-09-15 04:06:19
品牌 Logo 应用领域
美国万代 - AOS 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
7页 140K
描述
Complementary Enhancement Mode Field Effect Transistor

AO4620 技术参数

生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:2.11Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏源导通电阻:0.024 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL AND P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AO4620 数据手册

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AO4620  
Complementary Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO4620 uses advanced trench  
technology MOSFETs to provide excellent  
RDS(ON) and low gate charge. The  
complementary MOSFETs may be used in  
inverter and other applications.Standard  
Product AO4620 is Pb-free (meets ROHS  
& Sony 259 specifications).  
n-channel  
p-channel  
-30V  
-5.3A (VGS = -10V)  
RDS(ON)  
VDS (V) = 30V  
ID = 7.2A (VGS=10V)  
RDS(ON)  
< 24m(VGS=10V)  
< 36m(VGS=4.5V)  
< 38m(VGS = -10V)  
< 60m(VGS = -4.5V)  
D2  
D1  
1
2
3
4
8
7
6
5
S2  
G2  
S1  
G1  
D2  
D2  
D1  
D1  
G2  
G1  
SOIC-8  
S2  
S1  
n-channel  
p-channel  
Absolute Maximum Ratings T =25°C unless otherwise noted  
A
Parameter  
Symbol  
Max n-channel  
Max p-channel Units  
VDS  
Drain-Source Voltage  
30  
±20  
7.2  
-30  
±20  
V
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current F  
Pulsed Drain CurrentB  
TA=25°C  
TA=70°C  
-5.3  
-4.5  
-30  
A
ID  
6.2  
IDM  
30  
TA=25°C  
TA=70°C  
2
2
PD  
W
Power DissipationF  
Avalanche CurrentB  
1.44  
13  
1.44  
17  
IAR  
A
Repetitive avalanche energy 0.3mHB  
EAR  
25  
43  
mJ  
°C  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
-55 to 150  
Thermal Characteristics: n-channel and p-channel  
Parameter  
Symbol  
Device  
Typ  
50  
80  
Max Units  
62.5 °C/W  
100 °C/W  
40 °C/W  
Maximum Junction-to-AmbientA  
n-ch  
n-ch  
n-ch  
t 10s  
Steady-State  
Maximum Junction-to-LeadC  
Steady-State  
RθJA  
Maximum Junction-to-AmbientA  
RθJL  
RθJA  
32  
Maximum Junction-to-AmbientA  
p-ch  
p-ch  
p-ch  
50  
80  
32  
62.5 °C/W  
100 °C/W  
40 °C/W  
t 10s  
Maximum Junction-to-AmbientA  
Steady-State  
Maximum Junction-to-LeadC  
Steady-State  
RθJL  
Alpha & Omega Semiconductor, Ltd.  
www.aosmd.com  

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