Datasheet > AO4621L

AO4621L

更新时间： 2024-11-21 20:09:27

品牌	Logo	应用领域
美国万代 - AOS		/
页数	文件大小	规格书
7页	140K
描述
Transistor

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技术参数
数据手册

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AO4621L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

AO4621L 数据手册

AO4621

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

n-channel

V_DS(V) = 40V

I_D= 6A (V_GS=10V)

R_DS(ON)

The AO4621 uses advanced trench

technology MOSFETs to provide excellent

R_DS(ON)and low gate charge. The

complementary MOSFETs may be used

in H-bridge, Inverters and other

applications. Standard Product AO4621

is Pb-free (meets ROHS & Sony 259

specifications). AO4621L is a Green

Product ordering option. AO4621 and

AO4621L are electrically identical.

p-channel

-40V

-5A (V_GS= -10V)

R_DS(ON)

< 31mΩ (V_GS=10V)

< 45mΩ (V_GS=4.5V)

< 45mΩ (V_GS= -10V)

< 63mΩ (V_GS= -4.5V)

SOIC-8

p-channel

n-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

V_DS

Drain-Source Voltage

Gate-Source Voltage

-40

V_GS

±20

T_A=25°C

T_A=70°C

-5

Continuous Drain

Current ^A

Pulsed Drain Current ^B

I_D

-4

-20

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.28

-55 to 150

1.28

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

Typ

Max Units

62.5 °C/W

110 °C/W

50 °C/W

62.5 °C/W

110 °C/W

50 °C/W

Maximum Junction-to-Ambient ^A

n-ch

p-ch

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

R_θJA

R_θJL

Maximum Junction-to-Ambient ^A

t ≤ 10s

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

中文翻译

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