Datasheet > AO4622

AO4622

更新时间： 2024-09-15 12:51:27

品牌	Logo	应用领域
飞思卡尔 - FREESCALE		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
9页	755K
描述
20V Dual P N-Channel MOSFET

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AO4622 数据手册

AO4622

20V Dual P + N-Channel MOSFET

General Description

MOSFETs to provide excellent R

The AO4622 uses advanced trench technology

charge. The complementary MOSFETs may be used

host of other applications.

_DS(ON)and low gate

to form a level shifted high side switch, and for a

Features

N-Channel

P-Channel

-20V

-5A (V_GS=-4.5V)

V_DS(V) = 20V

I_D= 7.3A (V_GS=4.5V)

R_DS(ON)

< 23mΩ (V_GS=10V)

< 30mΩ (V_GS=4.5V)

< 84mΩ (V_GS=2.5V)

< 53mΩ (V_GS= -4.5V)

< 87mΩ (V_GS= -2.5V)

Top View

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

Drain-Source Voltage

V_DS

-20

Gate-Source Voltage

Continuous Drain

Current ^AF

V_GS

±16

7.3

±12

-5

T_A=25°C

T_A=70°C

I_D

6.2

-4.2

-25

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

Avalanche Current ^B

1.44

I_AR

°C

Repetitive avalanche energy 0.3mH ^B

E_AR

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

n-ch

62.5

110

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

R_θJA

R_θJL

Maximum Junction-to-Ambient ^A

t ≤ 10s

p-ch

62.5

110

°C/W

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

1/9

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与AO4622相关器件

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