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AO4616_11 PDF预览

AO4616_11

更新时间: 2024-11-18 12:51:31
品牌 Logo 应用领域
美国万代 - AOS /
页数 文件大小 规格书
9页 387K
描述
30V Complementary MOSFET

AO4616_11 数据手册

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AO4616  
30V Complementary MOSFET  
General Description  
Product Summary  
The AO4616 uses advanced trench technology to provide  
excellent RDS(ON) and low gate charge. This  
N-Channel  
P-Channel  
VDS= 30V  
-30V  
complementary N and P channel MOSFET configuration  
is ideal for low Input Voltage inverter applications.  
ID= 8A (VGS=10V)  
RDS(ON)  
-7A (VGS=-10V)  
RDS(ON)  
< 20m(VGS=10V)  
< 28m(VGS=4.5V)  
< 22m(VGS=-10V)  
< 40m(VGS=-4.5V)  
100% UIS Tested  
100% Rg Tested  
ESD Protected  
100% UIS Tested  
100% Rg Tested  
SOIC-8  
D2  
D1  
Top View  
Bottom View  
Top View  
S2  
D2  
D2  
D1  
D1  
G2  
S1  
G1  
G2  
G1  
S1  
S2  
Pin1  
n-channel  
p-channel  
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
VDS  
Max n-channel  
Max p-channel  
Units  
Drain-Source Voltage  
Gate-Source Voltage  
30  
±20  
8
-30  
±20  
-7  
V
V
VGS  
TA=25°C  
TA=70°C  
Continuous Drain  
Current  
Pulsed Drain Current C  
Avalanche Current C  
ID  
A
6.5  
40  
-6  
IDM  
-40  
IAS, IAR  
EAS, EAR  
19  
18  
2
27  
36  
2
A
Avalanche energy L=0.1mH C  
mJ  
TA=25°C  
PD  
W
°C  
Power Dissipation B  
TA=70°C  
1.3  
1.3  
Junction and Storage Temperature Range  
TJ, TSTG  
-55 to 150  
Thermal Characteristics  
Parameter  
Symbol  
Typ  
48  
Max  
62.5  
90  
Units  
°C/W  
°C/W  
°C/W  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A D  
Maximum Junction-to-Lead  
t
10s  
RθJA  
Steady-State  
Steady-State  
74  
RθJL  
32  
40  
Rev 2: Jan. 2011  
www.aosmd.com  
Page 1 of 9  

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