Datasheet > AO4615L

AO4615L

更新时间： 2024-09-15 08:30:59

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	192K
描述
Complementary Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO4615L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.84
Base Number Matches：	1

AO4615L 数据手册

AO4615

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

The AO4615 uses advanced trench

technology MOSFETs to provide

excellent R_DS(ON)and low gate charge.

The complementary MOSFETs may be

used to form a level shifted high side

switch, and for a host of other

applications. It is ESD protected.

Standard product AO4615 is Pb-free

(meets ROHS & Sony 259

n-channel

p-channel

-30V

-5.7A (V_GS=10V)

V_DS(V) = 30V

I_D= 7.2A (V_GS=10V)

R_DS(ON)

< 24mΩ (V_GS=10V)

< 40mΩ (V_GS=4.5V)

< 39mΩ (V_GS= -10V)

< 62mΩ (V_GS= -4.5V)

ESD rating: 1500V (HBM)

P-channel MOSFET has an additional R_OC< 1MΩ for

open circuit protection.

specifications). AO4615L is a Green

Product ordering option. AO4615 and

AO4615L are electrically identical

R_OC

SOIC-8

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel Units

V_DS

Drain-Source Voltage

±20

7.2

-30

±20

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

T_A=25°C

T_A=70°C

-5.7

-4.9

-30

I_D

6.1

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.44

Avalanche Current ^B

I_AR

Repetitive avalanche energy 0.1mH ^B

E_AR

°C

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Typ

Max

Units

t ≤ 10s

Maximum Junction-to-Ambient

n-ch

62.5 °C/W

110 °C/W

50 °C/W

R_θJA

Steady-State

t ≤ 10s

R_θJL

R_θJA

R_θJL

Maximum Junction-to-Lead

Maximum Junction-to-Ambient

p-ch

62.5 °C/W

110 °C/W

50 °C/W

Steady-State

Maximum Junction-to-Lead

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

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