AO4625

更新时间： 2024-11-06 04:06:19

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管场效应晶体管
页数	文件大小	规格书
7页	167K
描述
Complementary Enhancement Mode Field Effect Transistor

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技术参数
数据手册

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AO4625 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.61
Base Number Matches：	1

AO4625 数据手册

AO4625

Complementary Enhancement Mode Field Effect Transistor

General Description

Features

The AO4625 uses advanced trench

technology MOSFETs to provide excellent

R_DS(ON)and low gate charge. The

complementary MOSFETs may be used in

power inverters, and other

n-channel

p-channel

-30V

V_DS(V) = 30V

I_D= 6.9A (V_GS=10V)

R_DS(ON)

-5.4A (V_GS= -10V)

R_DS(ON)

applications.Standard Product AO4625 is Pb-

free (meets ROHS & Sony 259

specifications). AO4625L is a Green Product

ordering option. AO4625 and AO4625L are

electrically identical.

< 28mΩ (V_GS=10V)

< 42mΩ (V_GS=4.5V)

< 45mΩ (V_GS= -10V)

< 75mΩ (V_GS= -4.5V)

SOIC-8

p-channel

n-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel Units

V_DS

Drain-Source Voltage

±20

-30

±20

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

T_A=25°C

T_A=70°C

6.9

-5.4

I_D

5.8

-4.6

Pulsed Drain Current ^B

I_DM

-20

T_A=25°C

T_A=70°C

P_D

Power Dissipation

1.44

-55 to 150

1.44

-55 to 150

T_J, T_STG

Junction and Storage Temperature Range

°C

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

Typ

Max Units

62.5 °C/W

110 °C/W

40 °C/W

Maximum Junction-to-Ambient ^A

n-ch

t ≤ 10s

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

R_θJA

R_θJL

Maximum Junction-to-Ambient ^A

p-ch

62.5 °C/W

110 °C/W

40 °C/W

t ≤ 10s

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

Alpha & Omega Semiconductor, Ltd.

12 3 4 5 6 7

中文翻译

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