AO4622L

更新时间： 2024-11-04 13:05:35

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
9页	257K
描述
Transistor

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技术参数
数据手册

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AO4622L 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.84
Base Number Matches：	1

AO4622L 数据手册

AO4622

20V Dual P + N-Channel MOSFET

General Description

Product Summary

N-Channel

P-Channel

-20V

-5A (V_GS=-4.5V)

The AO4622 uses advanced trench technology

MOSFETs to provide excellent R_DS(ON)and low gate

charge. The complementary MOSFETs may be used

to form a level shifted high side switch, and for a

host of other applications.

V_DS(V) = 20V

I_D= 7.3A (V_GS=4.5V)

R_DS(ON)

< 23mΩ (V_GS=10V)

< 30mΩ (V_GS=4.5V)

< 84mΩ (V_GS=2.5V)

< 53mΩ (V_GS= -4.5V)

< 87mΩ (V_GS= -2.5V)

100% UIS Tested

100% Rg Tested

100% UIS Tested

100% Rg Tested

SOIC-8

Top View

Bottom View

Top View

Pin1

n-channel

p-channel

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Max n-channel

Max p-channel

Units

Drain-Source Voltage

V_DS

-20

Gate-Source Voltage

Continuous Drain

Current ^AF

V_GS

±16

7.3

±12

-5

T_A=25°C

T_A=70°C

I_D

6.2

-4.2

-25

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

P_D

Power Dissipation

Avalanche Current ^B

1.44

I_AR

°C

Repetitive avalanche energy 0.3mH ^B

E_AR

Junction and Storage Temperature Range

T_J, T_STG

-55 to 150

Thermal Characteristics: n-channel and p-channel

Parameter

Symbol

Device

Typ

Max

Units

°C/W

Maximum Junction-to-Ambient ^A

t ≤ 10s

n-ch

62.5

110

R_θJA

Maximum Junction-to-Ambient ^A

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

R_θJL

R_θJA

R_θJL

Maximum Junction-to-Ambient ^A

t ≤ 10s

p-ch

62.5

110

°C/W

Steady-State

Maximum Junction-to-Lead ^C

Steady-State

Alpha & Omega Semiconductor, Ltd.

www.aosmd.com

12 3 4 5 6 7...9

中文翻译

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