Datasheet > AO4620

AO4620

更新时间： 2024-10-15 18:09:47

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
8页	1221K
描述
SOP-8

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AO4620 数据手册

AO4620

COMPLEMENTARY MOSFET

FEATURES

 VDS=30V,ID=7.2A,RDS(ON)≤24mΩ@VGS=10V

 VDS=-30V,ID=-5.3A,RDS(ON)≤32mΩ@VGS=-10V

 Low gate charge and Ultra low on-resistance

 For low Input Voltage inverter applications

 Surface Mount device

SOP-8

MECHANICAL DATA



Case: SOP-8

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.3 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Gate-source voltage

Symbol

Max N-channel

Max P-channel

Unit

VDS

±20

7.2

6.2

-30

±20

-5.3

-4.5

-40

V_GS

T_A= 25°C

T_A= 70°C

Continuous drain current

I_D

Pulsed drain current

Avalanche current

Avalanche energy L=0.1mH

I_DM

I_AS,I_AR

E_AS,E_AR

T_A= 25°C

T_A= 70°C

Power dissipation

P_D

1.44

Thermal resistance from Junction to ambient

Thermal resistance from Junction to Lead

Junction temperature

R_θ

T_J

T_STG

100

°C/W

°C

150

Storage temperature

-55 ~+150

N-CHANNEL ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

V(BR)DSS*

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

V^GS=0V, I^D=250μA

I_DSS

I_GSS

μA V_DS=30V,

VGS=0V

V^GS=±20V

±100

2.6

V_DS=0V,

V_GS(th)

1.5

2.1

VDS=VGS, ID=250μA

On-State Drain Current

I_D(ON)

V_DS=5V,

V^GS=10V

17.7

23.5

0.74

VGS=10V, ID=7.2A

V^GS=10V, I^D=7.2A, T^J=125°C

V^GS=4.5V, I^D=5A

V^DS=5V, I^D=7.2A

IS=1A, VGS=0V

mΩ

Drain-source on-resistance

R_DS(ON)*

g_FS

V_SD

I_S

I_SM

C_iss

C_oss

C_rss

R_g

Forward transconductance

Diode forward voltage

Diode forward current

Pulsed Body-Diode Current

Input capacitance

Output capacitance

Reverse transfer capacitance

Gate resistance

Total gate charge

Gate-source charge

Gate-drain charge

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

2.5

373

448

V_{DS=15V, VGS=0V, f=1MHz}

1.8

3.5

7.2

1.3

1.7

4.5

2.7

14.9

2.9

2.8

V_{DS=0V, V
GS=0V, f=1MHz}

VGS=4.5V,VDS=15V,ID=7.2A

Q_g

V^GS=10V,V^DS=15V,I^D=7.2A

Q_gs

Q_gd

t_d(on)

t_r

t_d(off)

t_f

VGS=10V, VDS=15V,

RGEN=3Ω,RL=2.1Ω

t_rr

Q_rr

10.5 12.6

4.5

I =7.2A, dI/dt=100A/ s

I^F=7.2A, dI/dt=100A/ s

1 / 8

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